ssf20n60h 600v n-channel mosfet www.goodark.com page 1 of 7 rev.1.3 main product characteristics features and benefits description absolute max rating symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 20 i d @ tc = 100c continuous drain current, v gs @ 10v 13 i dm pulsed drain current 80 a power dissipation 208 w p d @tc = 25c linear derating factor 1.66 w/c v ds drain-source voltage 600 v v gs gate-to-source voltage 30 v e as single pulse avalanche energy @ l=32mh 400 mj i as avalanche current @ l=32mh 5 a t j t stg operating junction and storage temperature range -55 to + 150 c v dss 600v r ds (on) 0.2ohm(typ.) i d 20a to 247 marking and pin assignment schematic diagram ? high dv/dt and avalanche capabilities ? 100% avalanche tested ? low input capacitance and gate charge ? low gate input resistance ? lead free product the ssf20n60h series mosfet is a new technology, which combines an innovative super junction technology and advance process. this new technology achieves low r ds (on) , energy saving, high reliability and uniformity, superior power density and space saving.
ssf20n60h 600v n-channel mosfet www.goodark.com page 2 of 7 rev.1.3 thermal resistance symbol characteristics typ. max. units r jc junction-to-case 0.6 /w junction-to-ambient (t 10s) 62 /w r ja junction-to-ambient (pcb mounted, steady-state) 40 /w electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 600 v v gs = 0v, id = 250a 0.2 0.3 v gs =10v,i d = 13a r ds(on) static drain-to-source on-resistance 0.55 t j = 125c 2 4 v ds = v gs , i d = 250a v gs(th) gate threshold voltage 2.4 v t j = 125c 1 v ds =600v,v gs = 0v i dss drain-to-source leakage current 50 a t j = 125c 100 v gs =30v i gss gate-to-source forward leakage -100 na v gs = -30v q g total gate charge 90 q gs gate-to-source charge 12 q gd gate-to-drain("miller") charge 34 nc i d = 20a, v ds =480v, v gs = 10v t d(on) turn-on delay time 12 t r rise time 6 t d(off) turn-off delay time 65 t f fall time 6 ns v gs =10v, vds=380v, r l =38, r gen =4.7 id=10a c iss input capacitance 2334 c oss output capacitance 856 c rss reverse transfer capacitance 3 pf v gs = 0v v ds = 25v ? = 1mhz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) 20 a i sm pulsed source current (body diode) 80 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 1.2 v i s =20a, v gs =0v t rr reverse recovery time 480 ns q rr reverse recovery charge 10 nc t j = 25c, i f =20a, di/dt = 100a/s
ssf20n60h 600v n-channel mosfet www.goodark.com page 3 of 7 rev.1.3 test circuits and waveforms switch waveforms: notes : the maximum current rating is limited by bond-wires. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to-case thermal resistance. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. the maximum current rating is limited by bond-wires.
ssf20n60h 600v n-channel mosfet www.goodark.com page 4 of 7 rev.1.3 typical electrical and thermal characteristics figure 2. typ. gate to source cut-off voltage figure 1: power dissipation figure 3. typ. gate charge figure 4: typ. capacitances
ssf20n60h 600v n-channel mosfet www.goodark.com page 5 of 7 rev.1.3 figure 5. drain-source breakdown voltage typical electrical and thermal characteristics figure 6. drain-source on-state resistance
ssf20n60h 600v n-channel mosfet www.goodark.com page 6 of 7 rev.1.3 mechanical data to247 package outline dimension min. max. min. max. a 19.81 20.81 0.78 0.819 b 20.8 21.46 0.819 0.845 c 15.57 16.26 0.61 0.64 d 3.55 3.65 0.14 0.144 e 4.32 5.49 0.17 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h D 4.5 D 0.177 j 1 1.4 0.04 0.055 k 10.8 11 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 millimeter inches dim.
ssf20n60h 600v n-channel mosfet www.goodark.com page 7 of 7 rev.1.3 ordering and marking information device marking: ssf20n60h package (available) to247 operating temperature range c : -55 to 150 oc devices per unit package type units/ tube tubes/inner box units/inner box inner boxes/carton box units/carton box to247 30 8 240 5 1200 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 175 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 or 175 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
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